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Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 9, 2003, Pages 591-598

In situ studies of the MBE growth of III-V systems using RHEED and STM

(1) Joyce, B A a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; THIN FILMS; ULTRAHIGH VACUUM;

SURFACE SCIENCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0041304973 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1024522524257 Document Type: Conference Paper

Times cited : (8)

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