Spatial distribution of in during the initial stages of growth of InAs on GaAs(001)-c(4 × 4)

Surface Science

Volumn 365, Issue 3, 1996, Pages 735-742

  Belk, J G ^a   Sudijono, J L ^a   Holmes, D M ^a   McConville, C F ^a,b   Jones, T S ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Adsorption kinetics; Atom solid reactions; Chemisorption; Epitaxy; Gallium arsenide; Growth; Indium arsenide; Molecular beam epitaxy; Quantum wells; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy; Semiconducting films

Indexed keywords

ADSORPTION; CHEMISORPTION; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SURFACE STRUCTURE;

ATOM SOLID REACTIONS; SEMICONDUCTING SURFACES; SINGLE CRYSTAL SURFACES; SPATIAL DISTRIBUTION; SURFACE TOPOGRAPHY;

SEMICONDUCTOR GROWTH;

EID: 0030271045     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00757-1     Document Type: Article

References (22)

1. See for example, Strained Layer Superlattices, Semiconductor and Semi-metal Series, Vols. 32 and 33, Ed. T.P. Pearsell (Academic, New York, 1990).
2. J.M. Moison, C. Guille, F. Houzay, F. Barthe and M. Van Rompay, Phys. Rev. B. 40 (1989) 6149.
3. C. Guille, F. Houzay, J.M. Moison and F. Barthe, Surf. Sci. 189/190 (1987) 1041.
4. O. Brandt, K. Ploog, L. Tapfer, M. Hohenstein, R. Bierwolf and F. Phillipp, Phys. Rev. B 45 (1992) 8443.
5. J.M. Gerard and J.Y. Marzin, Phys. Rev. B. 45 (1992) 6313.
6. J.M. Gerard, J. Cryst. Growth 127 (1993) 981.
7. T. Kawai, H. Yonezu, Y. Ogasawara, D. Saito and K. Pak, J. Appl. Phys. 74 (1993) 1770.
8. J. Nagle, J.P. Landesman, M. Larive, C. Mottet and P. Bois, J. Cryst. Growth 127 (1993) 550.
9. H.P. Yu, C. Roberts and R. Murray, Appl. Phys. Lett. 66 (1995) 2253.
10. M.-I. Alonso, M. Ilg and K.H. Ploog, Phys. Rev. B 50 (1994) 1628.
11. G.S. Solomon, J.A. Trezza, and J.S. Harris, Jr., Appl. Phys. Lett. 66 (1995) 3161.
12. K.H. Ploog and O. Brandt, Semicond. Sci. Technol. 8 (1993) S229.
13. P.K. Larsen, J.H. Neave, J.F. van der Veen, P.J. Dobson and B.A, Joyce, Phys. Rev. B. 27 (1983) 4966.
14. A.R. Avery, D.M. Holmes, J.L. Sudijono, T.S. Jones and B.A. Joyce, Surf. Sci. 323 (1995) 91.
15. M. Sauvage-Simkin, Y. Garreau, R. Pinchaux, M.B. Veron, J.P. Landesman and J. Nagle, Phys. Rev. Lett. 75 (1995) 3485.
16. A.R. Avery, J.L. Sudijono, D.M. Holmes, T.S. Jones and B.A. Joyce, Appl. Phys. Lett. 66 (1995) 91.
17. A.R. Avery, J.L. Sudijono, T.S. Jones and B.A. Joyce, Surf. Sci. 340 (1995) 57.
18. V. Bressler-Hill, S. Varma, A. Lorke, B.Z. Nosho, P.M. Petroff and W.H. Weinberg, Phys. Rev. Lett. 74 (1995) 3209.
19. S.S. Dosanjh, P. Dawson, M.R. Fahy, B.A. Joyce, R.A. Stradling and R. Murray, J. Cryst. Growth 127 (1993) 579.
20. R.M. Feenstra, Semicond. Sci. Technol. 9 (1994) 2157.
21. J.F. Zheng, J.D. Walker, M.B. Salmeron and E.R. Weber, Phys. Rev. Lett. 72 (1994) 2414.
22. M. Pfister, M.B. Johnson, S.F. Alvarado, H.W.M. Salemink, U. Marti, D. Martin, F. Morier-Genoud and F.K. Reinhart, Appl. Phys. Lett. 67 (1995) 1459.