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Volumn 385, Issue 2-3, 1997, Pages

Self-assembled InAs islands on GaAs(111) substrates

(4) Schujman, S B a Soss, S R a Stokes, K a Schowalter, L J a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

Atomic force microscopy; Gallium arsenide; Indium arsenide; Molecular beam epitaxy; Photoluminescence; Quantum wells; Self assembly; Semiconductor semiconductor interfaces

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE PROPERTIES;

INDIUM ARSENIDE; SELF ASSEMBLED COMPOUNDS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031197447 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00387-7 Document Type: Article

Times cited : (15)

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