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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 16, 2000, Pages 10891-10895

Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

(7) Joyce, P B a Krzyzewski, T J a Bell, G R a Jones, T S a Malik, S a Childs, D a Murray, R a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ELECTRON DIFFRACTION; GROWTH RATE; LUMINESCENCE; QUANTUM MECHANICS; SCANNING TUNNELING MICROSCOPY; STRUCTURE ACTIVITY RELATION;

EID: 0034667141 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.10891 Document Type: Article

Times cited : (206)

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