In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1270-1273

  Xue, Q K ^a,b   Hasegawa, Y ^a   Ogino, T ^a   Kiyama, H ^a   Sakurai, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001464748     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589449     Document Type: Article

References (33)

1. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).
2. Q. Xie et al., Phys. Rev. Lett. 75, 2542 (1995).
3. G. S. Solomon et al., Phys. Rev. Lett. 76, 952 (1996).
4. G. S. Solomon et al, Appl. Phys. Lett. 66, 3161 (1995).
5. S. Farad et al., Appl. Phys. Lett. 65, 1388 (1994).
6. H. Drexler et al., Phys. Rev. Lett. 73, 2252 (1994).
7. W. J. Schaffer et al., J. Vac. Sci. Technol. B 1, 688 (1983).
8. E. Tournie et al, Appl. Phys. Lett. 60, 2877 (1992); E. Tournie and K. H. Ploog, Thin Solid Films 231, 43 (1993).
9. E. Tournie et al, Appl. Phys. Lett. 60, 2877 (1992); E. Tournie and K. H. Ploog, Thin Solid Films 231, 43 (1993).
10. C. W. Snyder et al., Appl. Phys. Lett. 62, 46 (1993).
11. M. Y. Yen et al, Surf. Sci. 174, 606 (1986).
12. V. Bressler et al., Phys. Rev. Lett. 74, 3209 (1995).
13. C. W. Snyder et al., Phys. Rev. B 46, 9551 (1992).
14. C. W. Snyder et al., Phys. Rev. Lett. 66, 3032 (1991).
15. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).
16. T. Hashizume et al., Phys. Rev. Lett. 73, 2208 (1994); Phys. Rev. B 51, 4200 (1995).
17. T. Hashizume et al., Phys. Rev. Lett. 73, 2208 (1994); Phys. Rev. B 51, 4200 (1995).
18. H. H. Farrell and C. J. Palmstrom, J. Vac. Sci. Technol. B 8, 903 (1990).
19. D. J. Chadi, J. Vac. Sci. Technol. A 5, 834 (1987).
20. The deviation of growth conditions results in the normal S-K mode (with more As) or causes nonstoichiometric deposition - extra In-cluster formation (with more In).
21. H. Yamaguchi and Y. Horokoshi, Jpn. J. Appl. Phys. 33, L1423 (1994).
22. S. Ohkouchi and I. Tanaka, Appl. Phys. Lett. 59, 1588 (1991).
23. C. Kendrick, G. LeLay, and A. Kahn, Phys. Rev. B 54, 17 877 (1996).
24. T. -C. Chang and D. E. Aspnes, Phys. Rev. B 41, 12002 (1990); D. E. Aspnes et al, Phys. Rev. Lett. 64, 192 (1990); Q. K. Xue et al, ibid. 74, 3177 (1995).
25. T. -C. Chang and D. E. Aspnes, Phys. Rev. B 41, 12002 (1990); D. E. Aspnes et al, Phys. Rev. Lett. 64, 192 (1990); Q. K. Xue et al, ibid. 74, 3177 (1995).
26. T. -C. Chang and D. E. Aspnes, Phys. Rev. B 41, 12002 (1990); D. E. Aspnes et al, Phys. Rev. Lett. 64, 192 (1990); Q. K. Xue et al, ibid. 74, 3177 (1995).
27. M. D. Pashley, Phys. Rev. B 40, 10481 (1990).
28. D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L. -E. Swartz, Phys. Rev. B 41, 5701 (1990).
29. A. Tranpert, E. Tournie, and K. H. Ploog, Appl. Phys. Lett. 66, 2265 (1995).
30. Y. W. Mo and M. G. Lagally, J. Cryst. Growth 111, 876 (1991).
31. R. Butz and S. Kampers, Appl. Phys. Lett. 61, 1307 (1992).
32. H. J. W. Zandvliet et al., Phys. Rev. Lett. 75, 3890 (1995).
33. J. Behrend, M. Wassermeier, and K. H. Ploog, J. Cryst. Growth (in press).