Using anodization to oxidize ultrathin aluminum film for high-k gate dielectric application

Journal of the Electrochemical Society

Volumn 150, Issue 7, 2003, Pages

  Lin, Yen Po ^a   Hwu, Jenn Gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANODIC OXIDATION; CURRENT DENSITY; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; TEMPERATURE MEASUREMENT; THERMODYNAMIC STABILITY; THERMOOXIDATION; THICKNESS MEASUREMENT; ULTRATHIN FILMS;

GATE DIELECTRICS; LOW TRAP DENSITY; ULTRATHIN ALUMINUM FILM;

ALUMINA;

EID: 0038783313     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1577545     Document Type: Article

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