Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal

Solid-State Electronics

Volumn 45, Issue 9, 2001, Pages 1531-1536

  Chen, Yung Chieh ^a   Lee, Chuang Yuan ^a   Hwu, Jenn Gwo ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NONE

Author keywords

Alternating current; Anodic oxidation; Gate oxide

Indexed keywords

ANODIC OXIDATION; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SILICON WAFERS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

ALTERNATING CURRENT ANODIZATION; BREAKDOWN ENDURANCE;

GATES (TRANSISTOR);

EID: 0035448116     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00182-4     Document Type: Article

References (10)