Ultra thin (<3 nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 463-466

  Kim, B Y ^a   Luan, H F ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RAPID THERMAL PROCESSING (RTP); ULTRATHIN HIGH QUALITY NITRIDE/OXIDE STACK GATE DIELECTRICS;

CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; DIFFUSION IN SOLIDS; GATES (TRANSISTOR); HYSTERESIS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON NITRIDE; ULTRATHIN FILMS;

MOS DEVICES;

EID: 4244029560     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)