Comparative Evaluation of Gap-Fill Dielectrics in Shallow Trench Isolation for Sub-0.25 µm Technologies

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 841-844

  Nag, S ^a   Chatterjee, A ^a   Taylor, K ^a   Ali, I ^a   O'Brien S ^a   Aur, S ^a   Luttmer, J D ^a   Chen, I C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUDGET CONTROL; ELECTROMAGNETIC INDUCTION; PLASMA CVD; CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; DIODES; ELECTRIC VARIABLES MEASUREMENT; LEAKAGE CURRENTS; MOS DEVICES; OPTIMIZATION; OXIDES; PLASMA APPLICATIONS; TRANSISTORS;

COMPARATIVE EVALUATIONS; DEVICE PERFORMANCE; DIELECTRIC TECHNOLOGY; HIGH DENSITY PLASMAS; HYDROGEN SILSESQUIOXANE; INDUCTIVELY-COUPLED; OPTIMIZED PROCESS; PLASMA-CVD; PROCESS SCHEMES; TRENCH ISOLATION;

DIELECTRIC MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE;

HIGH DENSITY PLASMA; HYDROGEN SILSESQUIOXANE; SHALLOW TRENCH ISOLATION;

EID: 0030382670     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554111     Document Type: Conference Paper

References (6)

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4. A. Chattejee et al, VLSI 96 Symposium Digest, pp.156
5. A. Perera et al, Roc. IEDM, 1995,pp. 679
6. M.K. Jain et al., Proc. Advanced Metlzn for ULSI, 1994