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Volumn 191, Issue 4, 1998, Pages 697-710

Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1-xGex morphologies: A RHEED and TEM study

(5) Dentel, D a Bischoff, J L a Kubler, L a Werckmann, J b Romeo, M b

a UNIVERSITÉ DE HAUTE ALSACE (France)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MONOLAYERS; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON GERMANIUM;

SEMICONDUCTOR GROWTH;

EID: 0032137858 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00354-6 Document Type: Article

Times cited : (32)

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