MBE Si regrowth on carbon-induced Si(001)-c(4×4) reconstructions studied by RHEED

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 259-262

  Stoffel, M ^a   Simon, L ^a   Bischoff, J L ^a   Aubel, D ^a   Kubler, L ^a  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOLAYERS; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA;

SILICIUM; SURFACE DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0034504489     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01519-4     Document Type: Article

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