Formation and ordering effects of C-induced Ge dots grown on Si (001) by molecular beam epitaxy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 74, Issue 1, 2000, Pages 222-228

  Leifeld, Oliver ^a,b   Beyer, André ^a   Müller, Elisabeth ^a   Kern, Klaus ^b   Grützmacher, Detlev ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DEPOSITION; MOLECULAR BEAM EPITAXY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

SELF ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033730831     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00565-6     Document Type: Article

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