A 23-GHz low-noise amplifier in SiGe heterojunction bipolar technology

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 177-180

  Schuppener, G ^a   Harada, T ^a   Li, Y ^a  

^a Ericsson Microwave Systems AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POWER SUPPLIES TO APPARATUS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

LOW NOISE AMPLIFIER; SILICON GERMANIUM;

AMPLIFIERS (ELECTRONIC);

EID: 0034863785     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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14. Analysis, design, and optimization of spiral inductors and transformers for Si RF IC's