7.7-ps CML using selective-epitaxial SiGe HBTs

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1998, Pages 97-100

  Ohue, Eiji ^a   Oda, Katsuya ^a   Hayami, Reiko ^a   Washio, Katsuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; GATES (TRANSISTOR); SEMICONDUCTING SILICON COMPOUNDS;

MAXIMUM OSCILLATION FREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032308971     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)