A single-chip 10Gb/s transceiver LSI using SiGe SOI/BiCMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2001, Pages 82-83+435

  Ueno, S ^a   Watanabe, K ^a   Kato, T ^a   Shinohara, T ^a   Mikami, K ^a   Hashimoto, T ^a   Takai, A ^a   Washio, K ^a   Takeyari, R ^a   Harada, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEMULTIPLEXING; DETECTOR CIRCUITS; LSI CIRCUITS; MULTIPLEXING EQUIPMENT; PHASE LOCKED LOOPS; VARIABLE FREQUENCY OSCILLATORS;

CLOCK AND DATA RECOVERY (CDR) CIRCUITS;

TRANSCEIVERS;

EID: 0035054766     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. 45GHz transimpedance 32dB limiting amplifier and 40Gb/s 1:4 high-sensitivity demultiplexer with decision circuit using SiGe HBTs for 40Gb/s optical receiver
2. 82GHz dynamic frequency divider in 5.5p ECL SiGe HBTs
3. Millimeter-wave bandwidth, SiGe-HBT Travelling Wave Amplifiers
4. max 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications
5. Si bipolar multiplexer, demultiplexer, and prescaler ICs for 10Gb/s SONET systems
6. 10 Gb/s Si receiver for short/long haul transmission