82GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2000, Pages 210-211

  Washio, K ^a   Ohue, E ^a   Oda, K ^a   Hayami, R ^a   Tanabe, M ^a   Shimamoto, H ^a   Harada, T ^a   Kondo, M ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT CONTROL; EMITTER COUPLED LOGIC CIRCUITS; EPITAXIAL GROWTH; FREQUENCY RESPONSE; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RADAR SYSTEMS; RADIO COMMUNICATION; SCHEMATIC DIAGRAMS; SEMICONDUCTING SILICON COMPOUNDS; VOLTAGE CONTROL;

GAIN CUTOFF FREQUENCIES;

FREQUENCY DIVIDING CIRCUITS;

EID: 0034429729     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A 60GHz HEMT-MMIC analog frequency divider by two
2. A novel 75GHz InP HEMT dynamic divider
3. Over-60GHz design technology for an SCFL dynamic frequency divider using InP-based HEMT's
4. A 0.2μm self-aligned SiGe HBT featuring 107GHz fmax and 6.7ps ECL
5. A selective-epitaxial-growth SiGe-base HBT with SMI electrodes featuring 9.3ps ECL-gate delay