Polysilicon thin film transistors fabricated at 100 °C on a flexible plastic substrate

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 257-260

  Theiss, S D ^a   Carey, P G ^a   Smith, P M ^a   Wickboldt, P ^a   Sigmon, T W ^a   Tung, Y J ^a   King, T J ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER MOBILITY; CRYSTALLIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; POLYETHYLENE TEREPHTHALATES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION; SUBSTRATES;

LASER CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 0032254712     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)