Complementary metal-oxide-semiconductor thin-film transistor circuits from a high-temperature polycrystalline silicon process on steel foil substrates

IEEE Transactions on Electron Devices

Volumn 49, Issue 11, 2002, Pages 1993-2000

  Wu, Ming ^a,b   Bo, Xiang Zheng ^a   Sturm, James C ^a   Wagner, Sigurd ^a  

^a Princeton University   (United States)

^b Aegis Semiconductor Inc   (United States)

Author keywords

Complementary metal oxide semiconductor devices (CMOS); Thin film circuits; Thin film transistors (TFTs)

Indexed keywords

CMOS INTEGRATED CIRCUITS; METAL FOIL; MOSFET DEVICES; POLYSILICON; STEEL; SUBSTRATES;

STEEL FOIL;

THIN FILM TRANSISTORS;

EID: 0036867982     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.804702     Document Type: Article

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