a-Si:H TFTs made on polyimide foil by PE-CVD at 150 °C

Materials Research Society Symposium - Proceedings

Volumn 508, Issue , 1998, Pages 73-78

  Gleskova, H ^a   Wagner, S ^a   Suo, Z ^a  

^a PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CURRENTS; ETCHING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYIMIDES; SILICON NITRIDE; SUBSTRATES; THRESHOLD VOLTAGE;

POLYIMIDE FOILS;

THIN FILM TRANSISTORS;

EID: 0032314904     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-508-73     Document Type: Conference Paper

References (8)