High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5118-5124

  Abdelgader, N ^a   Evans Freeman, J H ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ELECTRON ENERGY LEVELS; ELECTRON IRRADIATION; ION BOMBARDMENT; LAPLACE TRANSFORMS; PHOTOLUMINESCENCE; POINT DEFECTS; SILICON;

INTERSITIAL CLUSTERS;

ION IMPLANTATION;

EID: 0037986707     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564286     Document Type: Article

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