Reverse annealing effects in heavy ion implanted silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 306-310

  Pellegrino, Paolo ^a   Keskitalo, Niclas ^a,b   Hallen, Anders ^a   Svensson, Bengt G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ERICSSON RADIO SYSTEMS AB   (Sweden)

Author keywords

Annealing; DLTS; Ion implantation; Lattice disorder; Point defects; Silicon

Indexed keywords

ANNEALING; CRYSTAL LATTICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISSOCIATION; HEAVY IONS; ION IMPLANTATION; POINT DEFECTS;

CONDUCTION BAND EDGE; LATTICE DISORDER; REVERSE ANNEALING EFFECTS;

SEMICONDUCTING SILICON;

EID: 0033513655     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00768-X     Document Type: Article

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