Neutron induced defects in silicon detectors characterized by DLTS and TSC methods

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 258-264

  Fretwurst, E ^a   Dehn, C ^a   Feick, H ^a   Heydarpoor, P ^a   Lindstrom G ^a   Moll, M ^a   Schutze C ^a   Schulz, T ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHARACTERIZATION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; HEAT TREATMENT; NEUTRON IRRADIATION; PARTICLE DETECTORS; SEMICONDUCTING SILICON;

MACROSCOPIC DETECTOR PROPERTIES; NEUTRON FLUENCES; NEUTRON INDUCED DEFECTS; SILICON DETECTORS; THERMALLY STIMULATED CURRENT;

RADIATION DAMAGE;

EID: 0030211684     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(95)01405-5     Document Type: Article

References (32)

1. The RD2 Collaboration, RD-2 Status Report, CERN/DRDC 94-34.
2. The RD20 Collaboration, RD20/STATUS REPORT, CERN/DRDC94-39.
3. Z. Li, Nucl. Instr. and Meth. A 360 (1995) 445 and literature cited here.
4. D.V. Lang, J. Appl. Phys. 45 (1974) 3023.
5. V. Eremin et al., Detection mechanism of radiation induced defect levels in high resistivity silicon by DLTS method with preliminary filling pulse, to be published in J. Appl. Phys.
6. M. Bruzzi et al., Nucl. Instr. and Meth. A 352 (1995) 618.
7. E. Fretwurst et al., Nucl. Instr. and Meth. A 288 (1990) 1.
8. G. Lutz, MPI-Halbleiterlabor, München and J. Kemmer, Ketek Gmbh, München, private communication.
9. H.J. Brede et al., Nucl. Instr. and Meth. A 274 (1989) 332.
10. R. Schmidt et al., Med. Phys. 7 (1980) 507.
11. H. Feick et al., these Proceedings. (7th Europ. Symp. on Semiconductor Detectors, Schloss Elmau, Bavaria, Germany, 1995) Nucl. Instr. and Meth. A. 377 (1996) 217.
12. Dr. L. Cohausz, Halbleitermeßtechnik Gmbh, Moosburg.
13. S. Weiss, Ph.D. thesis, University Kassel (1991).
14. J.C. Muller et al., Solid-State Electronics 17 (1974) 1293.
15. M.G. Buehler, Solid-State Electronics 15 (1972) 69.
16. E.M. Verbitskaya et al., Sov. Phys. Semicond. 26(11) (1992) 1101.
17. R. Wunstorf et al., Ref. [11], p. 290.
18. C. Dehn, Diploma thesis, Universität Hamburg (1995).
19. U. Biggeri et al., IEEE Trans. Nucl. Sci. NS-41(4) (1994) 964.
20. V. Eremin et al., Nucl. Instr. and Meth. A 360 (1995) 458.
21. M.T. Asom et al., Appl. Phys. Lett. 51(4) (1987) 256.
22. X.D. Zhan and G.D. Watkins, Phys. Rev. B47(11) (1993) 6363.
23. L.W. Song et al., Phys. Rev. B42(9) (1990) 5765.
24. L.W. Song and G.D. Watkins, Phys. Rev. B42(9) (1990) 5759.
25. J.M. Trombetta and G.D. Watkins, Appl. Phys. Lett. 51(14) (1987) 1103.
26. Landolt-Börnstein, Impurities and Defects in Group IV Elements and III-V Compounds, Vol. 22b (Springer, 1989).
27. J. Matheson et al., RD20 Technical Report TN/36 1995.
28. V. Eremin et al., IEEE Trans. Nucl. Sci. NS-42(4) (1995) 387.
29. M. Bosetti et al., Nucl. Instr. and Meth. A 361 (1995) 461.
30. R. Wunstorf, Ph.D. thesis, Universität Hamburg, see also DESY FH1K-92-01 (1992).
31. L.C. Kimerling et al., Phys. Rev. B3(2) (1971) 427.
32. G.D. Watkins and J.W. Corbett, Phys. Rev. 138(2) (1965) A543.