Erbium-doped Si1-xGex/Si structures for light emitting diodes

Semiconductor Science and Technology

Volumn 15, Issue 2, 2000, Pages 91-97

  Naveed, A T ^a   Evans Freeman, J H ^a   Vernon Parry, K D ^a   Wright, A C ^b   Houghton, D C ^c   Peaker, A R ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b GLYNDWR UNIVERSITY   (United Kingdom)

^c SiGe Microsystems   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

ERBIUM-DOPED SILICON-BASED ELECTROLUMINESCENT DEVICES;

LIGHT EMITTING DIODES;

EID: 0033904051     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/2/302     Document Type: Article

References (27)

1. Ennen H, Schneider J, Pomrenke G and Axmann A 1983 Appl. Phys. Lett. 43 943
2. Michel J, Benton L J, Ferrante R F, Jacobso D C, Eaglesham D J, Fitzgerald E A, Xie Y-H, Poate J M and Kimerling L C 1991 J. Appl. Phys. 70 2672
3. Coffa S, Franzo G, Priolo F, Polman A and Serna R 1994 Phys. Rev. B 49 16 313
4. Neufeld E, Sticht A, Luigart A, Brunner K and Abstreiter G 1998 Appl. Phys. Lett. 73 3061
5. Neufeld E, Sticht A, Brunner K, Riedl H and Abstreiter G 1998 J. Vac. Sci. Technol. B 16 2615
6. Franzo G, Coffa S and Priolo F 1997 J. Appl. Phys. 81 2784
7. Stimmer J, Reittinger A, Nutzel J F, Abstreiter G, Holzbreher H and Buchal Ch 1996 Appl. Phys. Lett. 68 3290
8. Matsuoka M and Tohno S 1997 Appl. Phys. Lett. 71 96
9. Sobolov N A, Emel'yanov A M and Shtel'makh K F 1997 Appl. Phys. Lett. 71 1930
10. Soref R A, Namavar F and Lorenzo J P 1990 Opt. Lett. 15 270
11. Namavar F and Soref R A 1991 J. Appl. Phys. 70 3370
12. Theodorou G, Tserbal C and Vlachos N D 1995 J. Appl. Phys. 78 3600
13. Yang Z, Weiss B L, Shao G and Namavar F 1995 J. Appl. Phys. 77 2254
14. Xu D-X, Janz S, Williams R, Allegretto E, Mailhot S, He J J, Baribeau J-M, Lafontaine H, Stapledon J, Fraser J W, Robillard M, Jessop P and Kovacic S 1997 Proc. SPIE 3007 178
15. Schmidtchen J, Schuppert B and Petermann K 1994 J. Lightwave Technol. 12 842
16. Meyerson B S 1994 Sci. Am. 270 42
17. Harame D L et al 1995 IEEE Trans. Electron Devices 42 455
18. Harame D L et al 1995 IEEE Trans. Electron Devices 42 469
19. Favennec P N, L'Haridon H, Mutonnet D, Salvi M and Gauneau M 1990 Japan. J. Appl. Phys. 29 L524
20. Hartung J, Evans J H, Dawson P, Scholes A P, Taskin T, Huda M Q, Jeynes C and Peaker A R 1996 Mater. Res. Soc. Symp. Proc. vol 422 (Pittsburgh, PA: Materials Research Society) p 119
21. Custer J S, Polman A, Snoeks E and ven den Hoven G N Mater. Res. Soc. Symp. Proc. vol 301 (Pittsburgh, PA: Materials Research Society) p 101
22. Gan F, Assali L V C and Kimerling L C 1995 Mater. Sci. Forum 196-201 579
23. Przybylinska H, Hendorfer G, Bruckner M, Palmetshofer L and Jantsch W 1995 Appl. Phys. Lett. 66 490
24. Custer J S, Polman A and van Pinxteren H M 1994 J. Appl. Phys. 75 2809
25. Huda M Q, Evans-Freeman J H, Peaker A R, Houghton D C, Joyce B and Nejim A 1998 J. Vac. Sci. Technol. 16 2928
26. Przybylinska H, Jantsch W, Suprun-Belevitch Yu, Stepikhova M, Palmetshofer L, Hendorfer G, Kozanecki A, Wilson R J and Sealy B J 1996 Phys. Rev. B 54 2532
27. Yassievich I N and Kimerling L C 1993 Semicond. Sci. Technol. 8 718