Modeling of vacancy cluster formation in ion implanted silicon

Journal of Applied Physics

Volumn 89, Issue 9, 2001, Pages 4758-4765

  Chakravarthi, Srinivasan ^a,c   Dunham, Scott T ^b  

^a BOSTON UNIVERSITY   (United States)

^b University of Washington   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035341050     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1352680     Document Type: Article

References (25)

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