Evolution from point to extended defects in ion implanted silicon

Journal of Applied Physics

Volumn 82, Issue 1, 1997, Pages 120-125

  Benton, J L ^a   Libertino, S ^a,c   Kringhoj P ^a,d   Eaglesham, D J ^a   Poate, J M ^a,e   Coffa, S ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF CATANIA   (Italy)

^c CNR   (Italy)

^d AARHUS UNIVERSITY   (Denmark)

^e NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000085788     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365583     Document Type: Article

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