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Volumn 55, Issue 16, 1997, Pages 10498-10507

Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon

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EID: 0001312002     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.10498     Document Type: Article
Times cited : (104)

References (49)
  • 10
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    • 0000542038 scopus 로고
    • L. C. Kimerling, in Radiation Effects in Semiconductors 1976, edited by N. B. Urli and J. W. Corbett, IOP Conf. Proc. No. 31 (Institute of Physics and Physical Society, Bristol, 1977), p. 221.
    • (1977) Radiation Effects in Semiconductors 1976 , pp. 221
    • Kimerling, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.