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Volumn 273-274, Issue , 1999, Pages 497-500

Annealing of the photoluminescence W-center in proton-irradiated silicon

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; PHOSPHORUS; PHOTOLUMINESCENCE; PROTON IRRADIATION;

FLOAT-ZONE SILICON;

SEMICONDUCTING SILICON;

EID: 0033335192 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00536-0 Document Type: Article

Times cited : (7)

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