Defect evolution in MeV ion-implanted silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 27-32

  Lalita, J ^a   Keskitalo, N ^b   Hallen A ^b   Jagadish, C ^c   Svensson, B G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; ION BOMBARDMENT; ION IMPLANTATION; POINT DEFECTS; SEMICONDUCTOR DOPING;

DEFECT REACTION KINETICS; VACANCY-TYPE DEFECTS;

SEMICONDUCTING SILICON;

EID: 0030566534     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00474-0     Document Type: Article

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