Improved Ni/SiC Schottky diode formation

Electronics Letters

Volumn 36, Issue 3, 2000, Pages 267-268

  Kestle, A ^a   Wilks, S P ^a   Dunstan, P R ^a   Pritchard, M ^a   Mawby, P A ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL CLEANING; HIGH TEMPERATURE OPERATIONS; LOW ENERGY ELECTRON DIFFRACTION; NICKEL; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THERMAL EFFECTS; THERMIONIC EMISSION; X RAY PHOTOELECTRON SPECTROSCOPY;

POST DEPOSITION ANNEAL; POWER DEVICES; ULTRAHIGH VACUUM;

SCHOTTKY BARRIER DIODES;

EID: 0034598683     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000244     Document Type: Article

References (8)

1. WEITZEL, C.E., PALMOUR, J.W., and CARTER, C.H.: 'Silicon carbide high power devices', IEEE Trans. Electron Dev., 1996, 43, pp. 1732-1741
2. WALDROP, J.R., and GRANT, R.W.: 'Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC: crystal face dependence', Appl. Phys. Lett., 1993, 62, (21), pp. 2685-2687
3. NOBLANC, O., ARNODO, C., BRYLINSKI, C., CASSETTE, S., KAKANAKOV, R., KASSAMAKOVA, L., NESHEV, M., KAKANAKOVA-GEORGIEVA, A., KRASTEV, V., and MARINOVA, T.: 'XPS and TLM characterization of ohmic contacts on SiC'. Proc. 23rd Int. Symp. Compound Semicnductors (IOP Publishing, Bristol, UK, 1997), pp. 609-612
4. KESTLE, A., WILKS, S.P., DUNSTAN, P.R., PRITCHARD, M., POPE, G., KOH, A., and MAWBY, P.A.: 'A UHV study of Ni/SiC Schottky barrier and ohmic contact formation'. Conf. Proc. Int. Conf. SiC and Related Materials, North Carolina, 1999
5. MADSEN, L.D., SVEDBERG, E.B., and RADAMSON, H.H.: 'Phase formation sequence of nickel silicides from rapid thermal annealing of Ni on 4H-SiC', Mater. Sci. Forum, 1998, 264-268, pp. 799-804
6. STARKE, U., FRANKE, M., BERNHARDT, J., and SCHARDT, J.: 'Large unit cell superstructures on hexagonal SiC-surfaces studied by LEED, AES and STM', Mater. Sci. Forum, 1998, 264-268, pp. 321-326
7. CHILUKURI, R.K., and BALIGA, B.J.: 'High voltage Ni/4H-SiC Schottky rectifiers', IEEE Conf. Proc., 1999, pp. 161-164
8. RHODERICK, E.H., and WILLIAMS, R.H.: 'Metal semiconductor contacts' (Clarendon Press, Oxford, England, 1988)