Effect of surface preparation and thermal anneal on electrical characteristics of 4H-SiC schottky barrier diodes

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 929-932

  Alok, D ^a   Egloff, R ^a   Arnold, E ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Power Devices; Schottky Diodes; Surface Preparation

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SURFACE TREATMENT; THERMAL EFFECTS;

VOLTAGE DROP;

SCHOTTKY BARRIER DIODES;

EID: 11644322808     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.929     Document Type: Article

References (6)

1. R. Raghunathan,IEEE Elec. Dev. Lett. vol. 16, (1995), p. 226.
2. A. Itoh, IEEE Elec. Dev. Lett. Vol. 17, (1996), p. 139.
3. th ISPSD, (1997), p. 165.
4. th ISPSD, (1997), p. 157.
5. E.H. Rhoderick, Metal-Semiconductor Contacts, (1988), Oxford Science Publications.
6. D. Alok, IEDM Technical Digest, (1993), p.691.