Ultrathin zirconium silicate films deposited on Si(100) using Zr(Oi-Pr)2(thd)2, Si(Ot-Bu)2(thd)2, and nitric oxide

Journal of the Electrochemical Society

Volumn 150, Issue 7, 2003, Pages

  Chen, H W ^a   Huang, T Y ^a   Landheer, D ^b   Wu, X ^b   Moisa, S ^b   Sproule, G I ^b   Kim, J K ^c   Lennard, W N ^c   Chao, T S ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN COMPOUNDS; SILICON COMPOUNDS; SURFACE ROUGHNESS; SURFACE STRUCTURE; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

MEDIUM ENERGY ION SCATTERING; NITRIC OXIDE; TETRAMETHYLHEPTANEDIONE; ZIRCONIUM SILICATE;

ZIRCONIUM COMPOUNDS;

EID: 0037768810     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1577339     Document Type: Article

References (31)

1. S.-H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett., 18, 209 (1997).
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 89, 5243 (2001).
3. D. J. Hubbard and D. G. Schlom, J. Mater. Res., 11, 2757 (1996).
4. J. Robertson, J. Vac. Sci. Technol. B, 18, 1785 (2000).
5. W.-J. Qi, R. Nieh, B. H. Lee, K. Onishi, L. Kang, Y. Jeon, J. C. Lee, V. Kaushik, B. Y. Nguyen, L. Prabhu, K. Eisenbeiser, and J. Finder, Technical Digest for VLSI Symposium, p. 40 (2000).
6. A. C. Jones, Chem. Vap. Deposition, 4, 169 (1998).
7. S. B. Desu, T. Shi, and C. K. Kwok, Mater. Res. Soc. Symp. Proc., 168, 349 (1990).
8. A. C. Jones, T. J. Leedham, P. J. Wright, M. J. Crosbie, P. A. Lane, D. J. Williams, K. A. Fleeting, D. J. Otway, and P. O'Brien, Chem. Vap. Deposition, 4, 46 (1998).
9. H.-W. Chen, T.-Y. Huang, D. Landheer, X. Wu, S. Moisa, G. I. Sproule, and T.-S. Chao, J. Electrochem. Soc., 149, F49 (2002).
10. B. C. Hendrix, A. S. Borovik, Z. Wang, C. Xu, J. F. Roeder, T. H. Baum, M. J. Bevan, M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, H. Bu, and L. Colombo, Mater. Res. Soc. Symp. Proc., 716, B6.7.1 (2002).
11. H.-W. Chen, D. Landheer, T.-S. Chao, J. E. Hulse, and T.-Y. Huang, J. Electrochem. Soc., 148, F140 (2001).
12. CRC Handbook of Chemistry and Physics, Chemical Rubber Corp., Boca Raton, FL (1983).
13. QUARKMEIS, simulation program, www.quarksimulation.com
14. J. B. Marion and F. C. Young, Nuclear Reaction Analysis: Graphs and Tables, p. 36 North-Holland Publishing Co., Amsterdam (1968).
15. G. Lucovsky and G. B. Rayner, Jr., Appl. Phys. Lett., 79, 4195 (2001).
16. J. R. Hauser and K. Ahmed, in Characterization and Metrology for ULSI Technology: 1998 International Conference, D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters, Editors, p. 235, The American Institute of Physics, Woodbury, NY (1998).
17. B. Cho, S. Lao, L. Sha, and J. P. Chang, J. Vac. Sci. Technol. A, 19, 2751 (2001).
18. S. Kato, K. Ozawa, K. Edamoto, and S. Otani, Jpn. J. Appl. Phys., Part 1, 9, 5217 (2000).
19. S. Iwata and A. Akitoshi, J. Appl. Phys., 79, 6658 (1996).
20. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 87, 484 (2000).
21. J. Guittet, J. P. Crocombette, and M. Gautier-Soyer, Phys. Rev. B, 63, 125117 (2001).
22. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley, New York (1982).
23. P. Lundgren and M. O. Andersson, J. Appl. Phys., 74, 4780 (1993).
24. A. Stesmans and V. V. Afanas'ev, Appl. Phys. Lett., 80, 1957 (2002).
25. P. Balk, Abstract III, The Electrochemical Society Extended Abstracts, Buffalo, NY, Oct 10-14, 1965
26. B. E. Deal, E. L. MacKenna, and P. L. Castro, J. Electrochem. Soc., 116, 997 (1968).
27. X. Wu, D. Landheer, and H.-W. Chen, Unpublished work.
28. M. Depas, T. Nigam, and M. Heyns, IEEE Trans. Electron Devices, 43, 1499 (1996).
29. M. Houssa, M. Tuominen, M. Naili, V. V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys., 87, 8615 (2000).
30. B. Brar, G. D. Wilk, and A. C. Seabaugh, Appl. Phys. Lett., 69, 2728 (1996).
31. M. Houssa, M. Naili, V. V. Afanas'ev, M. M. Heyns, and A. Stesmans, in Proceedings of the 2001 International Symposium on VLSI Technology, Systems, and Applications, IEEE p. 196 (2001).