Theoretical study of GaInNAs-GaAs-based semiconductor optical amplifiers

IEEE Journal of Quantum Electronics

Volumn 39, Issue 5, 2003, Pages 647-655

  Alexandropoulos, Dimitris ^a   Adams, Mike J ^a  

^a UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

GaInNas; Semiconductor optical amplifiers (SOAs)

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; MATHEMATICAL MODELS; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION;

AMPLIFIED SPONTANEOUS EMISSION; FREE-CARRIER THEORY; MULTIPLE-QUANTUM-WELL SEMICONDUCTOR OPTICAL AMPLIFIERS;

SEMICONDUCTOR LASERS;

EID: 0037767265     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.810268     Document Type: Article

References (42)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, "GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys., vol. 35, pp. 1273-1275, 1996.
2. K. Nakahara, M. Kondow, T. Kitatani, M. C. Larson, and K. Uomi, "1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 487-488, 1998.
3. S. Sato and S. Satoh, "1.3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapor deposition," Electron. Lett., vol. 35, pp. 1251-1252, 1999.
4. F. Hohnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, and M. Druminski, "Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm," Electron. Lett., vol. 35, pp. 571-572, 1999.
5. X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang, "Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant," Electron. Lett., vol. 35, pp. 1081-1083, 1999.
6. K. Uezugi, I. Suemune, T. Hasegawa, and T. Akutagawa, "Temperature dependence of band gap energies of GaAsN alloys," Appl. Phys. Lett., vol. 76, pp. 1285-1287, 2000.
7. M. Kondow, T. Kitatani, K. Nakahara, and T. Tanaka, "Temperature dependence of lasing wavelength in a GaInNAs laser diode," IEEE Photon. Technol. Lett., vol. 12, pp. 777-779, 2000.
8. W. Wei and A. Zunger, "Giant and composition-dependent optical bowing parameter in GaNAs alloys," Phys. Rev. Lett., vol. 76, pp. 664-667, 1996.
9. y/GaAs laser structures," Superlattices and Microstructures, vol. 29, pp. 169-186, 2001.
10. M. Hetterich, M. D. Dawson, A. Y.A. Yu. Egorov, D. Bernklau, and H. Riechert, "Electronic states and band alignment in GaInNAs/GaAs quantum-well structures with low nitrogen content," Appl. Phys. Lett., vol. 76, pp. 1030-1032, 2000.
11. 1-x," Appl. Phys. Lett., vol. 76, pp. 2409-2411, 2000.
12. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. Geisz, D. Friedman, J. Olson, and S. R. Kurtz, "Band anticrossing in GaInNAs alloys," Phys. Rev. Lett., vol. 82, pp. 1221-1224, 1999.
13. 1-x and related alloys," Solid State Commun., vol. 112, pp. 443-447, 1999.
14. J. Hader, S. W. Koch, J. V. Moloney, and E. P. O'Reilly, "Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers," Appl. Phys. Lett., vol. 77, pp. 630-632, 2000.
15. 1-x," Phys. Stat. Sol. (b), vol. 216, pp. 131-134, 1999.
16. D. Alexandropoulos and M. J. Adams, "Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum wells," J. Phys.: Condens. Matter, vol. 14, pp. 3523-3536, 2002.
17. J. C. L. Yong, J. M. Rorison, and I. H. White, "Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers," Appl. Phys. Lett., vol. 79, pp. 1085-1087.
18. J. B. Heroux, X. Yang, and W. I. Wang, "GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm," Appl. Phys. Lett., vol. 75, pp. 2716-2718, 1999.
19. D. Alexandropoulos and M. J. Adams, "Design considerations for 1.3 μm emission of GaInNAs/GaAs strained quantum well lasers," Proc. Inst. Elect. Eng. Optoelectron., to be published.
20. P. J. Klar, H. Gruning, J. Koch, S. Shafer, L. Volz, W. Stolz, H. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, and E. P. O'Reilly, "(Ga,In)(N,As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen," Phys. Rev. B., vol. 64, no. 121203(R), 2001.
21. K. Kim and A. Zunger, "Spatial correlations in GaInNAs alloys and their effects on the band-gap enhancement and electron localization," Phys. Rev. Lett., vol. 86, pp. 2609-2612, 2001.
22. S. Kurtz et al., "Structural changes during annealing of GaInNAs," Appl. Phys. Lett., vol. 78, pp. 748-750, 2001.
23. S. L. Chuang, Physics of Optoelectronic Devices. New York: Wiley Interscience, 1995.
24. G. Bastard, Wave Mechanics Applied to Semiconductor Superlattices Halsted, New York, 1988.
25. C. Chang and S. L. Chuang, "Modeling of strained quantum-well lasers with spin-orbit coupling," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 218-229, 1995.
26. D. Ahn, S. L. Chuang, and C. Chang, "Valence-band mixing effects on the gain and the refractive index change of quantum-well lasers," J. Appl. Phys., vol. 64, pp. 4056-4064, 1988.
27. R. H. A. Hamilton and P. Rees, "Line broadening due to carrier-carrier scattering in quantum well heterostructures," Semicond. Sci. Technol., vol. 8, pp. 738-734, 1993.
28. M. Asada, "Intraband relaxation time in quantum-well lasers," IEEE J. Quantum Electron., vol. 25, pp. 2019-2026, 1989.
29. M. R. Hofmann, N. Gerhardt, A. M. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Y. Egorov, H. Riechert, H. C. Schneider, and W. W. Chow, "Emission dynamics and optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers," IEEE J. Quantum Electron., vol. 38, pp. 213-221, 2002.
30. M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schäfer, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Y.A. Yu. Egorov, and H. Riechert, "Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime," Appl. Phys. Lett., vol. 78, pp. 3009-3011, 2001.
31. D. Alexandropoulos and M. J. Adams, "Assessment of GaInNAs as a potential laser material," Proc. Inst. Elect. Eng. Optoelectron., vol. 150, pp. 40-44, 2003.
32. D. Marcuse, "Computer model of an injection laser amplifier," IEEE J. Quantum Electron., vol. 19, pp. 63-73, 1983.
33. M. J. Adams, J. V. Collins, and I. D. Henning, "Analysis of semiconductor laser optical amplifiers," Proc. Inst. Elect. Eng. J, vol. 132, pp. 58-63, 1985.
34. D. D' Alessandro, G. Giuliani, and S. Donati, "Spectral gain and noise evaluation of SOA and SOA based switch matrix," Proc. Inst. Elect. Eng Optoelectron., vol. 148, pp. 125-130, 2001.
35. R. Fehse, S. Tomic, A. R. Adams, S. J. Sweeney, E. P. O'Reilly, A. Andreev, and H. Riechert, "A quantitative study of radiative, Auger and defect related recombination processes in 1.3-μm GaInNAs-based quantum well lasers," IEEE J. Select. Topics Quantum Electron., vol. 8, pp. 801-810, 2002.
36. M. O. Fischer, M. Reinhardt, and A. Forchel, "Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5 μm range," IEEE J. Select. Topics Quantum Electron., vol. 7, pp. 149-151, 1997.
37. J. S. Harris, "GaInNAs long-wavelength lasers: progress and challenges," Semicond. Sci. Technol., vol. 17, pp. 880-891, 2002.
38. W. Streifer, D. R. Scifres, and R. D. Burnham, "Optical analysis of multiple quantum well lasers," Appl. Opt., vol. 18, pp. 3547-3548, 1979.
39. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., vol. 89, pp. 5815-5875, 2001.
40. G. P. Agrawal, Fiber-Optic Communication Systems. New York: Wiley Intescience, 1997.
41. J. Masum, D. Ramoo, N. Balkan, and M. J. Adams, "Temperature dependence of the spontaneous emission factor in VCSELs," Proc. Inst. Elect. Eng. Optoelectron., vol. 146, pp. 245-251, 1999.
42. Y. Yamamoto, S. Saito, and T. Mukai, "AM and FM quantum noise in semiconductor lasers-part II: comparison of theoretical and experimental results for AlGaAs lasers," IEEE J. Quantum Electron., vol. QE-19, pp. 47-58, 1983.