Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

Applied Physics Letters

Volumn 79, Issue 8, 2001, Pages 1085-1087

  Yong, J C L ^a   Rorison, J M ^a   White, I H ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035920915     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1390482     Document Type: Article

References (16)

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