메뉴 건너뛰기




Volumn 14, Issue 13, 2002, Pages 3523-3536

Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum well lasers

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; MATHEMATICAL MODELS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

EID: 0037041125     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/13/310     Document Type: Article
Times cited : (22)

References (34)
  • 3
    • 0032680422 scopus 로고    scopus 로고
    • 1.3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition
    • (1999) Electron. Lett. , vol.35 , pp. 1251-1252
    • Sato, S.1    Satoh, S.2
  • 32
    • 0027671538 scopus 로고
    • Strain and quantum-confinement effects on differential gain of strained InGaAsP/InP quantum well lasers
    • (1993) J. Appl. Phys. , vol.74 , pp. 4242-4244
    • Seki, S.1    Yokoyama, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.