Vibrational modes and electronic properties of nitrogen defects in silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 4, 2003, Pages

  Goss, J P ^a   Hahn, I ^a   Jones, R ^a   Briddon, P R ^b   Oberg S ^c  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN; SILICON;

ARTICLE; COMPLEX FORMATION; DENSITY; ELECTRONICS; HIGH TEMPERATURE PROCEDURES; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; THEORY; THERMOSTABILITY; VIBRATION;

EID: 0037438608     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.045206     Document Type: Article

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