Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si

Applied Physics Letters

Volumn 76, Issue 25, 2000, Pages 3718-3720

  Kageshima, Hiroyuki ^a   Taguchi, Akihito ^a   Wada, Kazumi ^b  

^a NTT Basic Research Laboratories   (Japan)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001675297     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126760     Document Type: Article

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