Diffused nitrogen-related deep level in N-type silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 1993-1999

  Fuma, Naoki ^a   Tashiro, Koichiro ^a   Kakumoto, Katsunori ^a   Takano, Yukio ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Acceptor; Complex; Deep level; DLTS; Nitrogen; Vacancy

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL GROWTH; CRYSTAL LATTICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; NITROGEN; OXIDATION; QUENCHING; TEMPERATURE;

SCHOTTKY JUNCTION CAPACITANCE; TEMPERATURE DEPENDENCE;

SEMICONDUCTING SILICON;

EID: 0030123682     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1993     Document Type: Article

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