Pinning effect of punched-out dislocations in carbon-, nitrogen- or boron-doped silicon wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1240-1241

  Akatsuka, M ^a   Sueoka, K ^a  

^a Sumitomo Metal Industries Ltd   (Japan)

Author keywords

Boron; Carbon; Indentation test; Mechanical strength; Nitrogen; Punched out dislocation

Indexed keywords

BORON; CARBON; DISLOCATIONS (CRYSTALS); HEAT TREATMENT; NITROGEN; SEMICONDUCTOR DOPING; THERMAL STRESS;

PINNING EFFECTS;

SILICON WAFERS;

EID: 0035271295     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1240     Document Type: Article

References (10)