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Volumn 57, Issue 7, 1998, Pages 3887-3899

Interaction of hydrogen with substitutional and interstitial carbon defects in silicon

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Indexed keywords


EID: 0001274593     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.3887     Document Type: Article
Times cited : (55)

References (66)
  • 42
    • 25944471941 scopus 로고
    • Y. Kamiura, Y. Nishiyami, anf F. Hashimoto, in Diffusion in Materials, edited by M. Koiwa, K. Hirano, H. Nakajima, and T. Okada (Trans Tech, Zurich, 1993), Vol. 95-98, p. 1001.
    • (1993) Diffusion in Materials , vol.95-98 , pp. 1001
    • Kamiura, Y.1    Nishiyami, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.