High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 °C

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 56-59

  Cheng, I Chun ^a,b   Wagner, Sigurd ^a  

^a Princeton University   (United States)

^b NONE   (United States)

Author keywords

Field effect mobility; Nanocrystalline silicon; Thin film transistor

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL STRUCTURE; ELECTRON MOBILITY; HOLE MOBILITY; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; PLASMA ETCHING; SILICON;

ELECTRON FIELD EFFECTS;

THIN FILM TRANSISTORS;

EID: 0037416546     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01243-9     Document Type: Conference Paper

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