Amorphous silicon thin-film transistors on compliant polyimide foil substrates

IEEE Electron Device Letters

Volumn 20, Issue 9, 1999, Pages 473-475

  Gleskova, Helena ^a   Wagner, Sigurd ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; METAL FOIL; POLYIMIDES; STRAIN; SUBSTRATES;

COMPLIANT POLYIMIDE FOIL SUBSTRATES;

THIN FILM TRANSISTORS;

EID: 0032595848     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.784456     Document Type: Article

References (7)

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5. E. Y. Ma and S. Wagner, "a-Si: H thin-film transistors on reliable 25-μm thick steel foil," in Flat Panel Display Materials - 1998, G. N. Parsons, C. C. Tsai, T. S. Fahlen, and C. H. Seager, Eds., Mat. Res. Soc. Symp. Proc., vol. 508, pp. 13-18, 1998.
6. Z. Suo, E. Y. Ma, H. Gleskova, and S. Wagner, "Mechanics of rollable and foldable film-on-foil electronics," Appl. Phys. Lett., vol. 74, pp. 1177-1179, 1999.
7. g = 290°C), Kaneka Corporation, Osaka 530, Japan.