Retention analysis of the memorized states of the MFIS structure for ferroelectric-gate FET memory by considering leakage current through ferroelectric and insulator layers

Integrated Ferroelectrics

Volumn 34, Issue 1-4, 2001, Pages 37-46

  Okuyama, M ^a   Sugiyama, H ^a   Nakaiso, T ^a   Noda, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Leakage current; MFIS structure; Retention characteristics; Simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC INSULATING MATERIALS; FERROELECTRIC MATERIALS; GATES (TRANSISTOR); LEAKAGE CURRENTS; POISSON EQUATION;

CHARGE CONTINUITY EQUATION; FERROELECTRIC FIELD EFFECT TRANSISTOR; RETENTION ANALYSIS;

FERROELECTRIC DEVICES;

EID: 0035037258     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580108012872     Document Type: Conference Paper

References (9)