High-performance metal-ferroelectric-insulator-semiconductor structures with a damage-free and hydrogen-free silicon-nitride buffer layer

Applied Physics Letters

Volumn 78, Issue 9, 2001, Pages 1285-1287

  Fujisaki, Yoshihisa ^b   Kijima, Takeshi ^b   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001091207     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1351535     Document Type: Article

References (9)

1. T. Yamaguchi, M. Koyama, and S. Takagi, Proc. Solid State Dev. Mater. Tokyo, 482 (1999).
2. J. P. Han and T. P. Ma, Appl. Phys. Lett. 72, 1185 (1998).
3. E. Tokumitsu, G. Fujii, and H. Ishiwara, Appl. Phys. Lett. 75, 575 (1999).
4. P. J. Caplan, H. H. Poindexter, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 50, 5847 (1979).
5. F. B. McLean, IEEE Trans. Nucl. Sci. NS-27, 1651 (1980).
6. J. P. Han and T. P. Ma, Ferroelectric 27, 9 (1999).
7. Y. Fujisaki and H. Ishiwara, Jpn. J. Appl. Phys., Part 2 39, L1075 (2000).
8. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, Nature (London) 401, 682 (1999).
9. T. Kijima, Y. Fujisaki, and H. Ishiwara (unpublished).