Improved retention characteristics of metal-ferroelectric-insulator- semiconductor structure using a post-oxygen-annealing treatment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2639-2644

  Kodama, Kazushi ^a   Takahashi, Mitsue ^a   Ricinschi, Dan ^a   Ionut Lerescu, Alexandru ^a   Noda, Minoru ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

MFIS; Nonvolatile memory; Post oxygen annealing; Retention time; SrBi2Ta2O9 (SBT)

Indexed keywords

ANNEALING; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; OXYGEN; POLARIZATION; STRONTIUM COMPOUNDS; SURFACE ROUGHNESS;

MFIS; NONVOLATILE MEMORY; POST-OXYGEN ANNEALING; RETENTION TIME; SRBI2TA2O9 (SBT);

MIS DEVICES;

EID: 0013039804     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2639     Document Type: Article

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