Analysis and improvement of retention time of memorized state of metal-ferroelectric-insulator-semiconductor structure for ferroelectric gate FET memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2923-2927

  Takahashi, M ^a   Sugiyama, H ^a   Nakaiso, T ^a   Kodama, K ^a   Noda, M ^a   Okuyama, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Ferroelectrics; Insulator; Leakage current; Metal ferroelectric insulator semiconductor (MFIS); Metal ferroelectric insulator semiconductor (MIFIS); Retention

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC INSULATORS; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; GATES (TRANSISTOR); LEAKAGE CURRENTS;

METAL FERROELECTRIC INSULATOR SEMICONDUCTOR STRUCTURES (MFIS);

MISFET DEVICES;

EID: 0035300686     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2923     Document Type: Article

References (11)