Low-temperature preparation of ferroelectric Sr2(Ta1-x,Nbx)2O7 thin films by pulsed laser deposition and their application to metal-ferroelectric-insulator-semiconductor-FET

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2935-2939

  Nakaiso, T ^a   Noda, M ^a   Okuyama, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Fatigue; Ferroelectric thin film, Pulsed Laser Deposition(PLD); Low dielectric constant; Memory retention; MFIS FET; Sr2(Ta1 xxNbx)2O7 (STN)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FILM PREPARATION; GATES (TRANSISTOR); LOW TEMPERATURE EFFECTS; MISFET DEVICES; NONVOLATILE STORAGE; PERMITTIVITY; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON; STRONTIUM COMPOUNDS; SUBSTRATES; THRESHOLD VOLTAGE;

GATE RETENTION TIME;

FERROELECTRIC THIN FILMS;

EID: 0035300642     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2935     Document Type: Article

References (16)