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Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 4, 2002, Pages 453141-453147

Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

(6) Law, D C a Sun, Y a Li, C H a Visbeck, S B a Chen, G a Hicks, R F a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; INDIUM PHOSPHIDE; METAL COMPLEX; UNCLASSIFIED DRUG;

ARTICLE; ATOM; DIFFUSION; EXPOSURE; FILM; PRESSURE; SEMICONDUCTOR; STRESS STRAIN RELATIONSHIP; STRUCTURE ANALYSIS; SURFACE PROPERTY; TEMPERATURE DEPENDENCE; VAPOR;

EID: 0037101494 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.66.045314 Document Type: Article

Times cited : (16)

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