High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's

IEEE Transactions on Electron Devices

Volumn 47, Issue 8, 2000, Pages 1645-1652

  Lu, Wu ^a,b   Kuliev, Almaz ^b   Koester, Steven J ^a,c   Wang, Xie Wen ^a,d   Chu, Jack O ^c   Ma, Tso Ping ^a,d   Adesida, Ilesanmi ^a,b  

^a IEEE   (United States)

^b United States of America   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

JET VAPOR DEPOSITION (JVD); MODULATION-DOPED FIELD-EFFECT TRANSISTORS (MODFET); SILICON GERMANIDE;

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; VACUUM APPLICATIONS;

GATES (TRANSISTOR);

EID: 0034248273     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.853043     Document Type: Article

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