Gate oxide lifetime limited by `B-mode' stress induced leakage current and the scaling limit of silicon dioxides in the direct tunnelling regime

Semiconductor Science and Technology

Volumn 15, Issue 5, 2000, Pages 478-484

  Okada, Kenji ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; LEAKAGE CURRENTS; SERVICE LIFE; SILICA;

GATE OXIDE;

GATES (TRANSISTOR);

EID: 0033749122     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/5/307     Document Type: Article

References (24)

1. Okada K, Kawasaki S and Hirofuji Y 1994 Int. Conf. on Solid State Devices Mater. 565-7
2. Okada K and Kawasaki S 1995 Int. Conf. on Solid State Devices Mater. 473-5
3. Depas M, Nigam T and Heyns M M 1996 IEEE Trans. Electron Devices 43 1499-504
4. Okada K 1996 Int. Conf. on Solid State Devices Mater. 782-4
5. Okada K 1997 Japan. J. Appl. Phys. 36 1443-7
6. Weir B E et al 1997 Int. Electron Device Meeting pp 73-6
7. Sorsch T et al 1998 Symp. on VLSI Technology pp 222-3
8. Wu E, Nowak E, Aitken J, Abadeer W, Han L K and Lo S 1998 Int. Electron Device Meeting pp 187-90
9. Stathis J H and DiMaria D J 1998 Int. Electron Device Meeting pp 167-70
10. Degraeve R, Groeseneken G, Bellens R, Depas M and Maes H E 1995 Int. Electron. Device Meeting pp 863-6
11. Sakura T, Utsunomiya H, Kamakura Y and Taniguchi K 1998 Int. Electron Device Meeting pp 183-6
12. Okada K and Taniguchi K 1997 Appl. Phys. Lett. 70 351-3
13. Rofan R and Hu C 1991 Elecron Device Lett. 12 632
14. Degraeve R, Groeseneken G. Bellens R, Ogier J L, Depas M, Roussel P J and Maes H E 1998 IEEE Trans. Electron. Devices 45 904-11
15. Nigam T et al 1998 Int. Reliability Physics Symp. pp 62-9
16. Degraeve R, Pangon N, Kaczer B, Nigam T, Groeseneken G and Naem A 1999 Symp. on VLSI Technology pp 59-60
17. Timp G et al 1998 Int. Electron Device Meeting pp 615-18
18. Inukai T and Hiramoto T 1999 Int. Conf. on Solid State Devices Mater. pp 264-5
19. Kimizuka N, Yamamoto T, Mogami T, Yamaguchi K, Imai K and Horiuchi T 1999 Symp. on VLSI Technology pp 73-4
20. Okada K and Yoneda K 1999 Int. Electron Device Meeting pp 445-8
21. MacPherson J W etal 1985 Int. Reliability Physics Symp. p 1
22. Okada K, Kubo H, Ishinaga A and Yoneda K 1999 Symp. on VLSI Technology pp 57-8
23. Pompl T, Wurzer H, Kerber M, Wilkins R C W and Eisele I 1999 Int. Reliability Physics Symp. pp 82-7
24. Yamamoto T, Uejima K and Mogami T 1999 Int. Conf. on Solid State Devices Mater pp 114-15