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Volumn , Issue , 2000, Pages 216-217
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Impacts of strained SiO2 on TDDB lifetime projection
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC BREAKDOWN OF SOLIDS;
SEMICONDUCTOR DEVICE MODELS;
SILICA;
STATISTICAL METHODS;
TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);
INTEGRATED CIRCUIT TESTING;
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EID: 0033725595
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (14)
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References (5)
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